Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
15 V
1A
540 mV @ 1 A
10 ns
3 µA @ 7.5 V
20pF @ 10V,1MHz