Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
40 V
3A
5A
500 mV @ 3 A
790 mV @ 3 A
540 mV @ 5 A
520 mV @ 5 A
-
500 µA @ 40 V
500 µA @ 100 V
250pF @ 4V,1MHz