Total: 8
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
100 V
50 V
400 V
60 V
10A
5A
690 mV @ 5 A
810 mV @ 5 A
1 V @ 10 A
-
10 µA @ 50 V
10 µA @ 400 V
10 µA @ 100 V
200 µA @ 60 V
200 µA @ 100 V
150pF @ 4V,1MHz