Total: 20
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
100 V
50 V
200 V
30 V
150 V
15 V
1A
8A(DC)
220 mV @ 1 A
1.06 V @ 8 A
400 mV @ 1 A
-
35 ns
1 mA @ 30 V
10 µA @ 40 V
10 mA @ 15 V
10 µA @ 80 V
10 µA @ 120 V
10 µA @ 160 V
150pF @ 5V,1MHz