Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
10A
510 mV @ 10 A
490 mV @ 8 A
-
300 µA @ 35 V
700pF @ 4V,1MHz