Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
standard
Schottky barrier
80 V
3 V
1A(DC)
100mA
1.2 V @ 100 mA
350 mV @ 1 mA
-
1.6 ns
500 nA @ 80 V
400 nA @ 1 V
0.3pF @ 0V,1MHz