Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
50 V
60 V
3A
750 mV @ 3 A
-
500 µA @ 60 V
500 µA @ 50 V
300pF @ 4V,1MHz