Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
1A
500mA
550 mV @ 500 mA
620 mV @ 1 A
-
50 µA @ 30 V
50 µA @ 40 V
5 µA @ 30 V
125pF @ 0V,1MHz