Total: 11
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
100 V
80 V
200 V
70 V
90 V
1A
980 mV @ 1 A
875 mV @ 1 A
790 mV @ 1 A
-
25 ns
2 µA @ 200 V
5 µA @ 200 V
200 µA @ 100 V
200 µA @ 80 V
200 µA @ 90 V
200 µA @ 70 V
27pF @ 4V,1MHz