Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
20 V
30 V
500mA(DC)
200mA
500mA
620 mV @ 500 mA
390 mV @ 500 mA
380 mV @ 200 mA
-
160 µA @ 20 V
120 µA @ 30 V
25 µA @ 30 V
10pF @ 5V,1MHz