Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
TrenchSBR
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Level barrier
30 V
3A
490 mV @ 3 A
16 ns
20 µA @ 40 V
100pF @ 30V,1MHz