Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
25 V
10A
450 mV @ 10 A
-
1 mA @ 30 V
1 mA @ 25 V
350pF @ 4V,1MHz