Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
10 V
750mA(DC)
580 mV @ 1 A
3 ns
6 µA @ 10 V
37pF @ 10V,1MHz