Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
8A
850 mV @ 8 A
-
1.5 µA @ 100 V
168pF @ 4V