Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
stop production
Standard recovery>500ns,> 200mA(Io)
Level barrier
60 V
4A
520 mV @ 4 A
-
150 µA @ 60 V
180pF @ 5V,1MHz