Total: 9
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
pipe
On sale
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
Schottky barrier
SiC Schottky
20 V
600 V
30 V
650 V
1.5A
4A
1.75 V @ 4 A
400 mV @ 1 A
1.9 V @ 4 A
430 mV @ 1.5 A
-
0 ns
50 µA @ 600 V
40 µA @ 650 V
500 µA @ 30 V
200pF @ 0V,1MHz