Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
300mA(DC)
530 mV @ 300 mA
-
5 µA @ 30 V
22pF @ 0V,1MHz