Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
10 V
23 V
1A
3A(DC)
600 mV @ 1 A
620 mV @ 1 A
-
12 µA @ 15 V
25 µA @ 8 V
30pF @ 5V,1MHz