Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
80 V
40 V
30 V
1A
500mA(DC)
500mA
550 mV @ 1 A
450 mV @ 500 mA
400 mV @ 500 mA
420 mV @ 100 mA
-
50 µA @ 30 V
150 µA @ 40 V
200 µA @ 80 V
120pF @ 0V,1MHz