Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
300mA
450 mV @ 300 mA
-
50 µA @ 20 V
46pF @ 0V,1MHz