Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
40 V
30 V
200mA
100mA
500 mV @ 200 mA
600 mV @ 100 mA
600 mV @ 50 mA
-
5 µA @ 40 V
30 µA @ 30 V
5 µA @ 10 V
25pF @ 0V,1MHz