Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
10A(DC)
470 mV @ 10 A
0.47 V @ 10 A
-
1 mA @ 30 V
530pF @ 10V,1MHz