Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
bulk,pipe
CoolSiC™+
On sale
No recovery time > 500mA(Io)
SiC Schottky
1200 V
10A(DC)
31.9A(DC)
1.8 V @ 10 A
-
0 ns
18 µA @ 1200 V
62 µA @ 1200 V
525pF @ 1V,1MHz