Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
pipe
CoolSiC™+
stop production
No recovery time > 500mA(Io)
SiC Schottky
1200 V
7.5A(DC)
1.8 V @ 7.5 A
0 ns
180 µA @ 1200 V
380pF @ 1V,1MHz