Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
bulk,pipe
CoolSiC™+
stop production
No recovery time > 500mA(Io)
SiC Schottky
1200 V
10A(DC)
1.8 V @ 10 A
0 ns
240 µA @ 1200 V
500pF @ 1V,1MHz