Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
bulk
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
40 V
30 V
500mA
650 mV @ 500 mA
-
10 µA @ 40 V
10 µA @ 20 V
10 µA @ 30 V
60pF @ 0V,1MHz