Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
75 V
40 V
50 V
1A
875 mV @ 1 A
580 mV @ 1 A
-
25 ns
1 µA @ 75 V
100 µA @ 40 V
100 µA @ 50 V
25pF @ 10V,1MHz