Total: 16
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
CT,TB
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
20 V
100 V
40 V
200 V
30 V
150 V
60 V
1A
2A
3A
5A
15mA(DC)
350mA(DC)
450 mV @ 1 A
550 mV @ 1 A
500 mV @ 1 A
600 mV @ 200 mA
1 V @ 15 mA
500 mV @ 5 A
525 mV @ 3 A
520 mV @ 5 A
620 mV @ 3 A
600 mV @ 2 A
950 mV @ 5 A
820 mV @ 1 A
0.67 V @ 5 A
860 mV @ 2 A
820 mV @ 2 A
-
10 ns
1 ns
1 µA @ 100 V
200 µA @ 40 V
500 µA @ 40 V
500 µA @ 20 V
500 µA @ 30 V
100 µA @ 60 V
2 mA @ 40 V
220 µA @ 60 V
200 nA @ 50 V
1 µA @ 150 V
500 µA @ 200 V
5 µA @ 10 V
0.5 mA @ 60 V
60 µA @ 60 V
1.5 µA @ 150 V
2pF @ 0V,1MHz
50pF @ 0V,1MHz