Total: 8
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Surface mount
TR,CT,CT
Automotive, AEC-Q101
DIODESTAR™
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
100 V
600 V
800 V
30 V
90 V
85 V
1A
200mA(DC)
5A
6A
75mA(DC)
1 V @ 100 mA
550 mV @ 1 A
790 mV @ 1 A
1 V @ 50 mA
3 V @ 6 A
710 mV @ 5 A
1.15 V @ 5 A
4 ns
5 ns
35 ns
2 µA @ 25 V
1 mA @ 30 V
10 µA @ 600 V
10 µA @ 800 V
3.5 µA @ 100 V
500 µA @ 90 V
2 µA @ 75 V
1.5pF @ 0V,1MHz
30pF @ 4V,1MHz
80pF @ 4V,1MHz
10pF @ 10V,1MHz
40pF @ 4V,1MHz