Total: 11
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
80 V
200 V
400 V
1000 V
800 V
30 V
1A
500mA
2A
3A
215mA
140mA
980 mV @ 1 A
-
450 mV @ 3 A
470 mV @ 500 mA
360 mV @ 1 A
2.7 V @ 500 mA
580 mV @ 100 mA
2.5 V @ 500 mA
370 mV @ 3 A
1.8 V @ 1 A
1.8 V @ 2 A
35 ns
100 ns
1.5 ns
2 µA @ 25 V
10 µA @ 400 V
10 µA @ 200 V
500 µA @ 30 V
100 µA @ 20 V
1.5 mA @ 30 V
50 µA @ 800 V
5 mA @ 30 V