Total: 56
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
100 V
1200 V
50 V
200 V
400 V
600 V
1000 V
800 V
30 V
1A
8A
2A
3A
5A
1.15 V @ 3 A
1.1 V @ 8 A
1.15 V @ 5 A
1.1 V @ 3 A
985 mV @ 8 A
525 mV @ 1 A
1.1 V @ 2 A
-
2 µs
10 µA @ 50 V
10 µA @ 400 V
5 µA @ 1000 V
5 µA @ 100 V
10 µA @ 1000 V
5 µA @ 600 V
10 µA @ 600 V
10 µA @ 200 V
5 µA @ 400 V
100 µA @ 30 V
10 µA @ 100 V
5 µA @ 200 V
10 µA @ 800 V
5 µA @ 50 V
10 µA @ 1200 V
40pF @ 4V,1MHz