Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,CT
Final sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
30 V
1A
500 mV @ 1 A
-
500 µA @ 20 V
500 µA @ 30 V
110pF @ 4V,1MHz