Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
90 V
3A
850 mV @ 3 A
790 mV @ 3 A
-
500 µA @ 90 V
100pF @ 4V,1MHz