Total: 13
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
standard
Schottky barrier
100 V
80 V
40 V
30 V
70 V
45 V
100mA(DC)
1.2 V @ 100 mA
800 mV @ 100 mA
525 mV @ 100 mA
460 mV @ 10 mA
600 mV @ 100 mA
1 V @ 50 mA
450 mV @ 10 mA
600 mV @ 50 mA
450 mV @ 1 mA
-
6 ns
3 ns
500 nA @ 30 V
50 µA @ 30 V
100 nA @ 50 V
3 µA @ 30 V
100 nA @ 35 V
2.5 µA @ 70 V
100 nA @ 75 V
1 µA @ 25 V
1 µA @ 10 V
2pF @ 0V,1MHz
1.5pF @ 0V,1MHz
6pF @ 10V,1MHz
7pF @ 10V,1MHz
0.9pF @ 10V,1MHz
2pF @ 1V,1MHz