Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
350mA(DC)
600 mV @ 200 mA
10 ns
5 µA @ 20 V
28pF @ 0V,1MHz