Total: 49
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
pipe
Automotive, AEC-Q101
SWITCHMODE™
Stealth™
DIODESTAR™
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
100 V
1200 V
200 V
400 V
600 V
1000 V
800 V
150 V
-
60 V
300 V
650 V
45 V
35 V
15 V
520 V
10A(DC)
6A(DC)
8A
4A
12A(DC)
10A
15A
5A
50A
7.5A
8A(DC)
30A(DC)
15A(DC)
25A(DC)
37A(DC)
16A
25A
9A(DC)
5A(DC)
48A(DC)
3A(DC)
7.5A(DC)
1.28 V @ 4 A
1.7 V @ 3 A
1.05 V @ 15 A
1.6 V @ 10 A
1.7 V @ 10 A
1.7 V @ 6 A
840 mV @ 20 A
1.7 V @ 8 A
1.3 V @ 20 A
3.2 V @ 8 A
1.7 V @ 30 A
1.75 V @ 15 A
975 mV @ 8 A
840 mV @ 15 A
630 mV @ 16 A
2.2 V @ 15 A
1.75 V @ 20 A
800 mV @ 10 A
1.8 V @ 8 A
1.3 V @ 8 A
450 mV @ 25 A
1.15 V @ 5 A
1.8 V @ 15 A
1.8 V @ 10 A
1.75 V @ 30 A
2.3 V @ 5 A
1.54 V @ 50 A
2.5 V @ 8 A
1.7 V @ 12 A
2.1 V @ 12 A
2.3 V @ 3 A
1.7 V @ 9 A
2.1 V @ 10 A
1.7 V @ 5 A
1.8 V @ 7.5 A
60 ns
65 ns
50 ns
35 ns
40 ns
100 ns
0 ns
23 ns
95 ns
28 ns
124 ns
100 µA @ 35 V
50 µA @ 600 V
20 µA @ 600 V
10 µA @ 400 V
5 µA @ 100 V
100 µA @ 100 V
100 µA @ 600 V
10 µA @ 100 V
5 µA @ 200 V
40 µA @ 650 V
200 µA @ 1200 V
200 µA @ 650 V
5 µA @ 150 V
100 µA @ 60 V
25 µA @ 800 V
100 µA @ 45 V
30 µA @ 600 V
200 µA @ 45 V
25 µA @ 1000 V
15 mA @ 15 V
5 µA @ 520 V
15 µA @ 600 V
80 µA @ 600 V
300 µA @ 600 V
190 µA @ 650 V
1.1 mA @ 650 V
90 µA @ 600 V
500 µA @ 650 V
200 µA @ 600 V
200 µA @ 300 V
180 µA @ 1200 V
240 µA @ 1200 V
360 µA @ 1200 V
310 µA @ 650 V
305 µA @ 1200 V
1085pF @ 1V,100kHz
1220pF @ 1V,100KHz
1705pF @ 1V,100kHz
936pF @ 1V,100kHz
1260pF @ 1V,100kHz
870pF @ 1V,1MHz
1989pF @ 1V,100kHz
600pF @ 0V,1MHz
300pF @ 0V,1MHz
100pF @ 1V,1MHz
360pF @ 1V,1MHz
310pF @ 1V,1MHz
860pF @ 1V,1MHz
270pF @ 1V,1MHz
60pF @ 1V,1MHz
110pF @ 1V,1MHz
290pF @ 1V,1MHz
280pF @ 1V,1MHz
170pF @ 1V,1MHz
280pF @ 0V,1MHz
380pF @ 1V,1MHz
750pF @ 1V,1MHz
580pF @ 1V,1MHz