Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,TR,CT,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
No recovery time > 500mA(Io)
standard
Schottky barrier
SiC Schottky
75 V
1200 V
40 V
30 V
60 V
200mA
30mA
22.5A(DC)
300mA(DC)
15mA(DC)
1.25 V @ 150 mA
370 mV @ 1 mA
600 mV @ 200 mA
1.75 V @ 8 A
1 V @ 15 mA
4 ns
-
0 ns
1 ns
200 µA @ 1200 V
200 µA @ 50 V
500 nA @ 10 V
1 µA @ 10 V
2.5 µA @ 75 V
2pF @ 0V,1MHz
538pF @ 1V,100kHz