Total: 70
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Through-Hole
TB
TURBOSWITCH™
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
standard
Schottky barrier
75 V
100 V
1200 V
40 V
50 V
200 V
400 V
600 V
30 V
500 V
150 V
250 V
60 V
300 V
45 V
250mA(DC)
1A
200mA
1.5A
4A
2A
3A
5A
300mA
4A(DC)
9A
1 V @ 100 mA
1 V @ 10 mA
1.3 V @ 1 A
1.25 V @ 200 mA
500 mV @ 1 A
850 mV @ 3 A
500 mV @ 3 A
1 V @ 200 mA
950 mV @ 1 A
850 mV @ 2 A
500 mV @ 2 A
680 mV @ 1 A
1.1 V @ 300 mA
1.75 V @ 4 A
880 mV @ 20 mA
1.5 V @ 3 A
1.3 V @ 3 A
950 mV @ 5 A
1.5 V @ 1 A
820 mV @ 3 A
1.2 V @ 1.5 A
570 mV @ 1 A
1 V @ 2 A
570 mV @ 18 A
680 mV @ 3 A
920 mV @ 5 A
1.9 V @ 1 A
950 mV @ 1.5 A
4 ns
50 ns
6 ns
75 ns
35 ns
40 ns
250 ns
150 ns
30 ns
55 ns
32 ns
5 µA @ 75 V
10 µA @ 50 V
50 µA @ 600 V
100 nA @ 200 V
10 µA @ 400 V
5 µA @ 100 V
5 µA @ 600 V
10 µA @ 600 V
10 µA @ 200 V
500 µA @ 40 V
100 nA @ 50 V
5 µA @ 400 V
10 µA @ 100 V
5 µA @ 200 V
2 µA @ 150 V
100 µA @ 150 V
5 µA @ 50 V
2 mA @ 30 V
500 µA @ 60 V
500 µA @ 100 V
100 nA @ 150 V
10 µA @ 300 V
50 µA @ 60 V
10 µA @ 150 V
5 µA @ 1200 V
3 µA @ 600 V
500 µA @ 45 V
50 nA @ 30 V
20 µA @ 400 V
10 µA @ 500 V
500 µA @ 200 V
3 µA @ 200 V
800 µA @ 45 V
8 µA @ 150 V
1.5 µA @ 200 V
2pF @ 0V,1MHz
4pF @ 0V,1MHz
50pF @ 4V,1MHz
5pF @ 0V,1MHz
10pF @ 4V,1MHz
2.5pF @ 0V,1MHz
20pF @ 4V,1MHz
75pF @ 4V,1MHz
900pF @ 4V,1MHz