Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TB
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
60 V
1A
2A
3A
500 mV @ 2 A
570 mV @ 1 A
680 mV @ 3 A
-
500 µA @ 40 V
500 µA @ 60 V
50 µA @ 60 V