Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
1A
8A
550 mV @ 1 A
550 mV @ 8 A
-
30 ns
1 mA @ 30 V