Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
Schottky barrier
SiC Schottky
30 V
650 V
2A(DC)
600 mV @ 2 A
1.8 V @ 2 A
-
0 ns
200 µA @ 30 V
330 µA @ 650 V
70pF @ 1V,1MHz