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Diode rectifier

Total: 18

BAW76_T50R
Brand：ON
Stock：35892
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 75V 300MA DO35
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BAW62_T50R
Brand：ON
Stock：9809
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 75V 300MA DO35
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1N914BTR_S00Z
Brand：ON
Stock：60338
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 200MA DO35
Offer
1N914B_T50R
Brand：ON
Stock：24809
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 200MA DO35
Offer
BAY72_T50R
Brand：ON
Stock：14269
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 125V 200MA DO35
Offer
1N4938TR
Brand：ON
Stock：59385
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 500MA DO35
Offer
1N4938_T50R
Brand：ON
Stock：54603
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 500MA DO35
Offer
1N3070_T50R
Brand：ON
Stock：23476
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 500MA DO35
Offer
1N486B_T50R
Brand：ON
Stock：21754
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 250V 200MA DO35
Offer
1N485B_T50R
Brand：ON
Stock：22017
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 200MA DO35
Offer
1N483BTR
Brand：ON
Stock：53526
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 80V 200MA DO35
Offer
1N483B_T50R
Brand：ON
Stock：39996
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 80V 200MA DO35
Offer
1N459A_T50R
Brand：ON
Stock：17888
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 500MA DO35
Offer
1N458A_T50R
Brand：ON
Stock：23877
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 150V 500MA DO35
Offer
1N457A_T50R
Brand：ON
Stock：23344
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 70V 200MA DO35
Offer
1N456A_T50R
Brand：ON
Stock：30379
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 30V 500MA DO35
Offer
1N4448TR_S00Z
Brand：ON
Stock：44791
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 200MA DO35
Offer
1N4448_T50R
Brand：ON
Stock：62797
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 200MA DO35
Offer
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Through-Hole

packing

TR

series
Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Small signal=< 200mA(Io),arbitrarily speed

Standard recovery>500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

75 V

100 V

80 V

200 V

30 V

150 V

70 V

250 V

125 V

Current average rectification (Io)

200mA

500mA

300mA

Voltage at different If - forward (Vf)

1 V @ 100 mA

Reverse recovery time (trr)

4 ns

-

50 ns

Current - reverse leakage at different Vr

5 µA @ 75 V

100 nA @ 50 V

100 nA @ 100 V

25 µA @ 125 V

100 nA @ 175 V

25 nA @ 175 V

25 nA @ 25 V

25 nA @ 60 V

100 nA @ 75 V

50 nA @ 225 V

Capacitance at different Vr and F

2pF @ 0V,1MHz

4pF @ 0V,1MHz

-

5pF @ 0V,1MHz

8pF @ 0V,1MHz

6pF @ 0V,1MHz

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