Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
2A(DC)
500 mV @ 2 A
5.5 ns
300 µA @ 30 V
50pF @ 25V,1MHz