Total: 10
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
40 V
50 V
70 V
60 V
15mA(DC)
1 V @ 15 mA
900 mV @ 15 mA
950 mV @ 15 mA
-
1 ns
200 nA @ 30 V
200 nA @ 50 V
200 nA @ 40 V
2pF @ 0V,1MHz
2.2pF @ 0V,1MHz
2.1pF @ 0V,1MHz