Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,TR,CT
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
standard
Schottky barrier
Level barrier
20 V
100 V
200 V
30 V
1A
200mA(DC)
3A
350mA(DC)
1 V @ 10 mA
1.1 V @ 1 A
1.3 V @ 1 A
550 mV @ 1 A
600 mV @ 200 mA
560 mV @ 1 A
1.3 V @ 3 A
4 ns
-
50 ns
150 ns
10 ns
5 µA @ 75 V
1 mA @ 20 V
5 µA @ 100 V
100 µA @ 30 V
5 µA @ 200 V
5 µA @ 20 V
4pF @ 0V,1MHz
50pF @ 4V,1MHz
50pF @ 0V,1MHz
15pF @ 4V,1MHz
110pF @ 4V,1MHz