Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
30 V
1A
350mA(DC)
550 mV @ 1 A
600 mV @ 200 mA
-
10 ns
1 mA @ 20 V
5 µA @ 20 V
50pF @ 0V,1MHz
110pF @ 4V,1MHz