Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
1A
550 mV @ 1 A
-
1 mA @ 20 V
110pF @ 4V,1MHz