Total: 24
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
TrenchSBR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Level barrier
100 V
80 V
40 V
50 V
30 V
60 V
45 V
4A
3A
15A
5A
20A
25A
570 mV @ 20 A
550 mV @ 25 A
490 mV @ 3 A
530 mV @ 3 A
520 mV @ 15 A
500 mV @ 20 A
530 mV @ 5 A
700 mV @ 15 A
700 mV @ 20 A
610 mV @ 25 A
540 mV @ 15 A
520 mV @ 4 A
510 mV @ 4 A
-
30 ns
16 ns
60 µA @ 30 V
400 µA @ 60 V
20 µA @ 40 V
500 µA @ 50 V
100 µA @ 45 V
500 µA @ 80 V
200 µA @ 100 V
30 µA @ 40 V
180 µA @ 60 V
150 µA @ 50 V
180 µA @ 40 V
300 µA @ 100 V
70 µA @ 40 V
350pF @ 50V,1MHz
100pF @ 30V,1MHz
150pF @ 30V,1MHz