Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
SBR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Level barrier
60 V
45 V
3A
10A
650 mV @ 3 A
500 mV @ 10 A
-
55 ns
100 µA @ 60 V
200 µA @ 45 V