Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
pipe
TrenchSBR®
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Level barrier
20 V
10 V
500mA
390 mV @ 500 mA
-
6 ns
50 µA @ 20 V
1 mA @ 10 V
180 µA @ 10 V
14pF @ 20V,1MHz